Tibor Lalinský: search on Z-Library

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1

AlGaN/GaN C-HEMT structures for dynamic stress detection

Gabriel Vanko, Milan Držík, Martin Vallo, Tibor Lalinský, Vladimír Kutiš, Stanislav Stančík, Ivan Rýger, Anna Benčurová

Journal:

Sensors and Actuators A: Physical

Year:

2011

Language:

english

File:

PDF, 651 KB

english, 2011

2

SPIE Proceedings [SPIE SPIE Microtechnologies - Grenoble, France (Wednesday 24 April 2013)] Smart Sensors, Actuators, and MEMS VI - MEMS pressure sensor fabricated by advanced bulk micromachining techniques

Vanko, Gabriel, Hudek, Peter, Zehetner, Johann, Dzuba, Jaroslav, Choleva, Pavlina, Vallo, Martin, Rýger, Ivan, Lalinský, Tibor, Schmid, Ulrich, Sánchez de Rojas Aldavero, José Luis, Leester-Schaedel,

Year:

2013

Language:

english

File:

PDF, 450 KB

english, 2013

3

Design and simulation of micromechanical thermal converter for RF power sensor microsystem

Jiri Jakovenko, Miroslav Husak, Tibor Lalinsky

Journal:

Microelectronics Reliability

Year:

2004

Language:

english

File:

PDF, 532 KB

english, 2004

4

Firm Competitiveness Determinants: Results of a Panel Data Analysis

Lalinsky, Tibor

Journal:

SSRN Electronic Journal

Year:

2013

Language:

english

File:

PDF, 527 KB

english, 2013

5

Bulk micromachining of SiC substrate for MEMS sensor applications

Vanko, Gabriel, Hudek, Peter, Zehetner, Johann, Dzuba, Jaroslav, Choleva, Pavlina, Kutiš, Vladimír, Vallo, Martin, Rýger, Ivan, Lalinský, Tibor

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 765 KB

english, 2013

6

Ohmic contacts to p-GaN Using Au/Ni-Mg-O Metallization

Liday, Jozef, Vogrinčič, Peter, Hotový, Ivan, Bonanni, Alberta, Sitter, Helmut, Lalinský, Tibor, Vanko, Gabriel, Řeháček, Vlastimil, Breza, Juraj, Ecke, Gernot

Journal:

Journal of Electrical Engineering

Year:

2010

Language:

english

File:

PDF, 271 KB

english, 2010

7

AlGaN/GaN Based SAW-HEMT Devices for Chemical Gas Sensors Operating in GHz Range

Ivan Rýger, Gabriel Vanko, Tibor Lalinský, Martin Vallo, Martin Tomáška, Adrian Ritomský

Journal:

Procedia Engineering

Year:

2011

Language:

english

File:

PDF, 548 KB

english, 2011

8

GaN/SiC based surface acoustic wave structures for hydrogen sensors with enhanced sensitivity

Rýger, Ivan, Vanko, Gabriel, Lalinský, Tibor, Haščík, Štefan, Benčúrová, Anna, Nemec, Pavol, Andok, Robert, Tomáška, Martin

Journal:

Sensors and Actuators A: Physical

Year:

2015

Language:

english

File:

PDF, 2.48 MB

english, 2015

9

MEMS Piezoelectric Pressure Sensor-modelling and Simulation

Kutiš, Vladimír, Dzuba, Jaroslav, Paulech, Juraj, Murín, Justín, Lalinský, Tibor

Journal:

Procedia Engineering

Year:

2012

Language:

english

File:

PDF, 453 KB

english, 2012

10

Ir/Al multilayer Gates for High Temperature Operated AlGaN/GaN HEMTs

Lalinský, Tibor, Vanko, Gabriel, Dobročka, Edmund, Osvald, Jozef, Babchenko, Oleg, Dzuba, Jaroslav, Veselý, Marián, Vančo, L'ubomír, Vogrinčič, Peter, Vincze, Andrej

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 1.61 MB

english, 2017

11

AlGaN/GaN C-HEMT structures for dynamic stress detection

Gabriel Vanko, Milan Držík, Martin Vallo, Tibor Lalinský, Vladimír Kutiš, Stanislav Stančík, Ivan Rýger, Ivan Kostič

Journal:

Procedia Engineering

Year:

2010

Language:

english

File:

PDF, 353 KB

english, 2010

12

Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT

Vallo, Martin, Lalinský, Tibor, Dobročka, Edmund, Vanko, Gabriel, Vincze, Andrej, Rýger, Ivan

Journal:

Applied Surface Science

Year:

2013

Language:

english

File:

PDF, 599 KB

english, 2013

13

Export characteristics and output volatility: comparative firm-level evidence for CEE countries

Čede, Urška, Chiriacescu, Bogdan, Harasztosi, Péter, Lalinsky, Tibor, Meriküll, Jaanika

Journal:

Review of World Economics

Year:

2018

Language:

english

File:

PDF, 1.88 MB

english, 2018

14

Modal Analysis of Gallium Nitride Membrane for Pressure Sensing Device

Dzuba, Jaroslav, Držík, Milan, Vanko, Gabriel, Rýger, Ivan, Vallo, Martin, Kutiš, Vladimír, Lalinský, Tibor

Journal:

Key Engineering Materials

Year:

2014

Language:

english

File:

PDF, 751 KB

english, 2014

15

[IEEE 2008 14th Conference on Microwave Techniques (COMITE 2008) - Prague, Czech Republic (2008.04.23-2008.04.24)] 2008 14th Conference on Microwave Techniques - Microwave Characterization and Properties of 2¿m Gate Length AlGaN/GaN HEMT Structures

Tomaska, Martin, Lalinsky, Tibor, Vanko, Gabriel, Misun, Martin

Year:

2008

Language:

english

File:

PDF, 2.37 MB

english, 2008

16

Pt/NiO ring gate based Schottky diode hydrogen sensors with enhanced sensitivity and thermal stability

Rýger, Ivan, Vanko, Gabriel, Lalinský, Tibor, Kunzo, Pavol, Vallo, Martin, Vávra, Ivo, Plecenik, Tomáš

Journal:

Sensors and Actuators B: Chemical

Year:

2014

Language:

english

File:

PDF, 1.98 MB

english, 2014

17

Role of electrode metallization in performance of semi-insulating GaAs radiation detectors

František Dubecký, Pavol Boháček, Mária Sekáčová, Bohumír Zaťko, Tibor Lalinský, Vladimír Linhart, Andrea Šagátová-Perd’ochová, Ján Mudroň, Stanislav Pospíšil

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

2007

Language:

english

File:

PDF, 165 KB

english, 2007

18

Modelling and Simulation of SAW Sensor Using FEM

Kutiš, Vladimír, Gálik, Gabriel, Královič, Viktor, Rýger, Ivan, Mojto, Emil, Lalinský, Tibor

Journal:

Procedia Engineering

Year:

2012

Language:

english

File:

PDF, 479 KB

english, 2012

19

SPIE Proceedings [SPIE Microtechnologies for the New Millennium - Maspalomas, Gran Canaria, Spain (Wednesday 2 May 2007)] Smart Sensors, Actuators, and MEMS III - Design and development of a microheater on GaAs for MEMS gas sensor array

Hotovy, Ivan, Becker, Thomas, Cané, Carles, Rehacek, Vlastimil, Lalinsky, Tibor, Barker, N. Scott, Hascik, Stefan, Mika, Fedor

Year:

2007

Language:

english

File:

PDF, 567 KB

english, 2007

20

Study on electronic properties of diamond/SiNx-coated AlGaN/GaN high electron mobility transistors operating up to 500 °C

Babchenko, Oleg, Vanko, Gabriel, Gerboc, Michal, Ižák, Tibor, Vojs, Marian, Lalinský, Tibor, Kromka, Alexander

Journal:

Diamond and Related Materials

Year:

2018

Language:

english

File:

PDF, 1014 KB

english, 2018

21

Enhanced Sensitivity of Pt/NiO Gate Based AlGaN/GaN C-HEMT Hydrogen Sensor

Rýger, Ivan, Vanko, Gabriel, Lalinský, Tibor, Dzuba, Jaroslav, Vallo, Martin, Kunzo, Pavol, Vávra, Ivo

Journal:

Key Engineering Materials

Year:

2014

Language:

english

File:

PDF, 415 KB

english, 2014

22

AIP Conference Proceedings [Author(s) 1ST INTERNATIONAL CONFERENCE ON RADIATIONS AND APPLICATIONS (ICRA-2017) - Algiers, Algeria (20–23 November 2017)] - High-field electron mobility model of vertical charge transport in Al/Al2O3/GaN/AlGaN/GaN heterostructures

Racko, Juraj, Mikolášek, Miroslav, Lalinský, Tibor, Grmanová, Alena, Benko, Peter, Kadlečíková, Magdaléna, Harmatha, Ladislav, Breza, Juraj

Year:

2018

Language:

english

File:

PDF, 1.77 MB

english, 2018

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